image sensor ccd area image sensor 1024 1024 pixels, front-illuminated fft-ccds s9737 series s9737 series is a family of fft-ccd area image sensors specifically designed for low-light-level detection in scientific applic ations. s9737 series also features low noise and low dark current (mpp mode operation). these enable low-light-level detection and long integration time, thus achieving a wide dynamic range. three different packages (ceramic dip, metal, plate type) are provided. metal package type (s9737-02) has a four-stage te-coole d element built into the same package for thermoelectric cooling. at room temperature operation, the device can be cooled down to -70 ?c with u sing forced air cooling. in addition, since both the ccd chip and te-cooled element are hermetically sealed, no dry air is required, thus allow ing easy handling. features l 1024 (h) 1024 (v) pixel format l pixel size: 12 12 m l 100 % fill factor l wide dynamic range l low dark current l low readout noise l mpp operation l 3 types of packages are available applications l astronomy l scientific measuring instrument l fluorescence spectrometer l raman spectrophotometer l optical and spectrophotometric analyzer l for low-light-level detection requiring general ratings parameter S9737-01 s9737-02 s9737-03 ccd structure full frame transfer fill factor 100 % number of active pixels 1024 (h) 1024 (v) pixel size 12 (h) 12 (v) m active area 12.288 (h) 12.288 (v) mm vertical clock phase 2 phase horizontal clock phase 2 phase output circuit one-stage mosfet source follower cooling non-cooled four-stage te-cooled non-cooled package 24-pin ceramic dip 28-pin metal package plate type window none (covered with tape) ar coated sapphire none 1
ccd area image sensor s9737 series absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit operating temperature topr -50 - +30 c storage temperature tstg -50 - +70 c ccd cooling temperature - -70 - +30 c od voltage v od -0.5 - +25 v rd voltage v rd -0.5 - +18 v isv voltage v isv -0.5 - +18 v ish voltage v ish -0.5 - +18 v igv voltage v ig1v , v ig2v -15 - +15 v igh voltage v ig1h , v ig2h -15 - +15 v sg voltage v sg -15 - +15 v og voltage v og -15 - +15 v rg voltage v rg -15 - +15 v tg voltage v tg -15 - +15 v vertical clock voltage v p1v , v p2v -15 - +15 v horizontal clock voltage v p1h , v p2h -15 - +15 v operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 18 20 22 v reset drain voltage v rd 12 13 14 v output gate voltage v og -0.5 2 - v substrate voltage v ss - 0 - v test point (vertical input source) v isv -v rd -v test point (horizontal input source) v ish - v rd - v test point (vertical input gate) v ig1v , v ig2v -8 0 - v test point (horizontal input gate) v ig1h , v ig2h -8 0 - v high v p1vh , v p2vh 036 vertical shift register clock voltage low v p1vl , v p2vl -9 -8 -7 v high v p1hh , v p2hh 0 3 6 horizontal shift register clock voltage low v p1hl , v p2hl -9 -8 -7 v high v sgh 036 summing gate voltage low v sgl -9 -8 -7 v high v rgh 0 3 6 reset gate voltage low v rgl -9 -8 -7 v high v tgh 036 transfer gate voltage low v tgl -9 -8 -7 v electrical characteristics (ta=25 c) parameter symbol remark min. typ. max. unit signal output frequency fc - - 0.1 1 mhz vertical shift register capacitance c p1v , c p2v - - 6000 - pf horizontal shift register capacitance c p1h , c p2h - - 200 - pf summing gate capacitance c sg - - 5 - pf reset gate capacitance c rg -- 5 -pf transfer gate capacitance c tg - - 50 - pf transfer efficiency cte * 1 0.99995 0.99999 - - dc output level vout * 2 12 15 18 v output impedance zo * 2 -3-k ? power dissipation p * 2, * 3 - 15 - mw *1: charge transfer efficiency per pixel, measured at half of the full well capacity. *2: the values depend on the load resistance. (v od =20 v, load resistance=22 k ? ) *3: power dissipation of the on-chip amplifier. 2
ccd area image sensor s9737 series electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol remark min. typ. max. unit saturation output voltage vsat - - fw sv - v vertical 30 60 - full well capacity horizontal fw - - 72 - ke - ccd node sensitivity sv * 4 -4.5-v/e - +25 c - 100 1500 0 c - 5 75 dark current (mpp mode) -70 c ds * 5 - 0.0005 0.005 e - /pixel/s readout noise nr * 6 -418e - rms dynamic range (area scanning) * 7 - 15000 - - spectral response range - - 400 to 1100 - nm photo response non-uniformity prnu * 8 - - 10 % point defects * 9 --0 cluster defects * 10 --0 blemish column defects - * 11 --0 - *4: v od =20 v , load resistance=22 k ? *5: dark current nearly doubles for every 5 to 7 c increase in temperature. *6: -40 c, operating frequency is 80 khz. *7: dr = fw / nr *8: measured at half of the full well capacity. prnu = noise / signal 100 [%], noise: fixed pattern noise (peak to peak) *9: white spots > 3 % of full well at 0 c after ts=1 s, black spots > 50 % reduction in response relative to adjacent pixels *10: a group of 2 to 9 continuous point defects *11: a group of 10 or more continuous point defects pin connections (S9737-01) pin no. symbol description remark 1 rg reset gate - 2 rd reset drain - 3 os output source - 4 od output transistor drain - 5 og output gate - 6 sg summing gate - 7 p2h ccd horizontal register clock-2 - 8 nc no connection - 9 p1h ccd horizontal register clock-1 - 10 nc no connection - 11 ig2h test point (horizontal input gate-2) shorted to ground 12 ig1h test point (horizontal input gate-1) shorted to ground 13 ish test point (horizontal input source) shorted to rd 14 tg transfer gate - 15 p2v ccd vertical register clock-2 - 16 nc no connection - 17 p1v ccd vertical register clock-1 - 18 nc no connection - 19 nc no connection - 20 ss substrate (gnd) - 21 nc no connection - 22 isv test point (vertical input source) shorted to rd 23 ig2v test point (vertical input gate-2) shorted to ground 24 ig1v test point (vertical input gate-1) shorted to ground 3
ccd area image sensor s9737 series 4 pin connections (s9737-02) pin no. symbol description remark 1 p- te-cooler- 2 nc 3 ss substrate (gnd) 4 nc 5 isv test point (vertical input source) shorted to rd 6 ig2v test point (vertical input gate-2) shorted to 0 v 7 ig1v test point (vertical input gate-1) shorted to 0 v 8 rg reset gate 9 rd reset drain 10 os output transistor source 11 od output transistor drain 12 og output gate 13 sg summing gate same timing as p2h 14 p+ te-cooler+ 15 tsh1 temperature sensor (hot side) 16 tsc1 temperature sensor (cool side) 17 tsc2 temperature sensor (cool side) 18 p2h ccd horizontal register clock-2 19 p1h ccd horizontal register clock-1 20 ig2h test point (horizontal input gate-2) shorted to 0 v 21 ig1h test point (horizontal input gate-1) shorted to 0 v 22 ish test point (horizontal input source) shorted to rd 23 p2v ccd vertical register clock-2 24 p1v ccd vertical register clock-1 25 tg transfer gate same timing as p2v * 12 26 nc 27 nc 28 tsh2 temperature sensor (hot side) pad connections (s9737-03) pad no. symbol description remark 1 rg reset gate 2 rd reset drain 3 os output transistor source 4 od output transistor grain 5 og output gate 6 sg summing gate 7nc 8 nc 9 p2h ccd horizontal register clock-2 10 p1h ccd horizontal register clock-1 11 ig2h test point (horizontal input gate-2) 12 ig1h test point (horizontal input gate-1) 13 ish test point (horizontal input source) 14 p2v ccd vertical resister clock-2 15 p1v ccd vertical resister clock-1 16 tg transfer gate same timing as p2v* 12 17 nc 18 nc 19 nc 20 ss substrate (gnd) 21 nc 22 isv test point (vertical input source) 23 ig2v test point (vertical input gate-2) 24 ig1v test point (vertical input gate-1) *12: tg is an isolation gate between vertical register and horizontal register. in st andard operation, the same pulse of p2v should be applied to the tg.
ccd area image sensor s9737 series 50 40 30 20 10 0 400 500 600 700 wavelength (nm) 800 900 1000 1100 1200 quantum efficiency (%) (typ. ta=25 ? c) kmpdb0244ea spectral response (without window) 100 (typ. ta=25 ? c) 95 90 85 80 400 500 600 700 800 wavelength (nm) transmittance (%) 900 1000 1100 1200 ar coated sapphire kmpdb0106ea dimensional outlines (unit: mm) spectral transmittance characteristics of window material 5 kmpda0140eb 1.27 3.0 2.4 12.288 22.73 0.3 23.11 0.3 22.86 0.3 1.3 0.3 2.54 30.48 0.3 12 13 24 12.288 27.0 r1.2 photosensitive surface pin no. 1 s9737-02 2 3 12 13 14 27 26 17 16 15 28 12.288 35.0 47.0 36.0 44.0 50.0 20.0 12.288 4.0 1.0 pin no. 1 pinched off tube 1st pin index mark 7.0 5.0 2.54 0.46 27.94 50.8 18.5 0.5 6.3 0.5 ar-coated sapphire window four-stage te-cooler photosensitive surface kmpda0142eb S9737-01 s9737-03 12.288 19 24 1 6 18 13 12 7 0.625 0.635 0.07 26.00 0.3 12.288 0.635 0.07 21.00 0.3 kmpda0183ea
ccd area image sensor s9737 series kmpdc0156ea integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view 4..1031 tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d12, s1..s1024, d13..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 1032 1024+8 (isolation) device structure, line output format (S9737-01) ...... ...... ...... h ig1v ig2v isv ss rg rd os od og sg d1 d2 d3 d4 d5 d6 d7 d8 d9 d10 d11 d12 d13 d14 d15 d16 d17 d18 d19 d20 1 2 3 45 6 20 23 22 24 14 17 v=1024 h=1024 ish ig1h ig2h p1h p2h 13 12 11 9 7 4 blank 4 blank 4 optical black 4 isolation 1024 signal out 4 isolation tg p1v 15 p2v 1 v pixel format left horizontal direction right blank optical black isolation effective isolation optical black blank 4 4 4 1024 4 - 4 top vertical direction bottom isolation effective isolation 4 1024 4 kmpdc0155ea timing chart area scanning 1 (low dark current mode) 6
ccd area image sensor s9737 series parameter symbol remark min. typ. max. unit pulse width tpwv6 18 - s p1v p2v, tg rise and fall time tprv, tpfv * 13 200 - - ns pulse width tpwh 500 5000 - ns rise and fall time tprh, tpfh 10 - - ns p1h, p2h duty ratio - * 13 - 50 - % pulse width tpws 500 5000 - ns rise and fall time tprs, tpfs 10 - - ns sg duty ratio - - -50- % pulse width tpwr 100 500 - ns rg rise and fall time tprr, tpfr - 5 - - ns tg C p1h overlap time tovr - 3 6 - s *13: symmetrical pulses should be overlapped at 50 % of maximum amplitude. kmpdc0157ea area scanning 2 (large full well mode) integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view 4..1031 1032 1024+8 (isolation) tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d12, s1..s1024, d13..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 parameter symbol remark min. typ. max. unit pulse width tpwv6 18 - s p1v p2v, tg rise and fall time tprv, tpfv * 14 200 - - ns pulse width tpwh 500 5000 - ns rise and fall time tprh, tpfh 10 - - ns p1h, p2h duty ratio - * 14 - 50 - % pulse width tpws 500 5000 - ns rise and fall time tprs, tpfs 10 - - ns sg duty ratio - - -50- % pulse width tpwr 100 500 - ns rg rise and fall time tprr, tpfr - 5 - - ns tg C p1h overlap time tovr - 3 6 - s *14: symmetrical pulses should be overlapped at 50 % of maximum amplitude. 7
ccd area image sensor s9737 series 0 -100 -80 -60 -40 -20 0 20 40 resistance ( ? ) 1400 1200 1000 800 600 400 200 temperature ( ? c) (typ. ta=25 ? c) kmpdb0107ea v - i ccd temperature - i 0 1 2 3 voltage (v) ccd temperature ( ? c) 4 5 6 -80 3.0 2.5 2.0 1.5 current (a) 1.0 0.5 0 -60 -40 -20 0 20 40 (typ. ta=25 ? c) specifications of built-in temperature sensors (s9737-02) parameter symbol condition min. typ. max. unit resistance at cool side rc t=0 c - 1000 - ? temperature coefficient of resistance at cool side - - - 0.00375 - ? / ? resistance at hot side rh t=0 c - 1000 - ? temperature coefficient of resistance at hot side - - - 0.00385 - ? / ? kmpdb0108ea specifications of built-in te-cooler (s9737-02) parameter symbol condition min. typ. max. unit internal resistance rint ta=27 c - 1.6 - ? maximum current * 15 imax th * 16 =27 c ? t * 17 = ? tmax - - 4.4 a maximum voltage vmax th* 16 =27 c ? t= ? tmax i=imax --7.4v maximum heat absorption * 18 qmax tc * 19 =th * 16 =27 c i=imax - - 3.0 w maximum temperature at hot side - - - 50 c ccd temperature - ta=25 c - -70 -50 c *15: if the current is greater than imax, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not a damage threshold. to protect the thermoelectric cooler (peltier element) and maintain stable operation, the supply current should be less than 60 % of this maximum current. *16: temperature at hot side of thermoelectric cooler. *17: ? t=th - tc *18: this is a theoretical heat absorption level that offsets the temperature difference in the te-cooled element when the maximum current is supplied to the unit. *19: temperature at cool side of thermoelectric cooler. 8
ccd area image sensor s9737 series precaution for use (electrostatic countermeasures) handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist strap, in order to prevent electrostatic damage due to electrical charges from friction. avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dis- charge. ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs. element cooling/heating temperature incline rate element cooling/heating temperature incline rate should be set at less than 5 k/min. hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 5 hamamatsu photonics k.k. cat. no. kmpd1081e03 apr. 2005 dn 9
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